ret y rt - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test v rrm 45 60 100 150 200 v v rms 31 42 70 105 140 v v dc 45 60 100 150 200 v i f(av) a i rrm 1a 0.80 0.80 0.85 0.57 0.70 0.75 0.84 0.95 0.95 0.72 0.85 0.85 15 10 5 dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1404005 version: a14 ito-220ab marking code mbrf 2045ct mbrf 2060ct mbrf 20100ct m ech an i cal dat a case: ito-220ab polarity: as marked mounting torque: 5 in-lbs maximum mbrf2045ct-y thru mbrf20200ct-y dual common cathode schottk y rectifier feat u res - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec taiwan semiconductor weight: 1.7 g (approximately) m ax i m u m rat i n gs an d elect ri cal ch aract eri st i cs (t a =25 unless otherwise noted) param et er sy m bol m brf 2 0 4 5 ct -y m brf 2 0 6 0 ct -y m brf 2 0 1 0 0 ct -y m brf 2 0 1 5 0 ct -y m brf 2 0 2 0 0 ct -y u n i t maximum repetitive peak reverse voltage maximum rms voltage mbrf 20150ct mbrf 20200ct maximum dc blocking voltage maximum average forward rectified current 20 peak repetitive forward current (rated vr, square wave, 20khz) i frm 20 a v 0.950.85 ma peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a peak repetitive reverse surge current (note 1) 0.5 10000 maximum reverse current @ rated vr t j =25 t j =125 i r 0.1 2 1.05 note 2: pulse test with pw=300 s, 1% duty cycle typical thermal resistance operating junction temperature range - 55 to +150 storage temperature range - 55 to +150 v 1.5 note 1: tp = 2.0 s, 1.0khz isolation voltage from terminals to heatsink with t=1.0 min v ac 0.95 1500 maximum instantaneous forward voltage (note 2) i f = 10 a, t j =25 i f = 10 a, t j =125 i f = 20 a, t j =25 i f = 20 a, t j =125 v f voltage rate of change (rated v r ) downloaded from: http:///
part n o. part n o. mbrf2060ct-y mbrf2060ct-y (ta=25 unless otherwise noted) document number: ds_d1404005 version: a14 green compound descri pt i on 50 / tube pack i n g mbrf2045ct-y thru mbrf20200ct-y taiwan semiconductor orderi n g i n form at i on pack i n g code green com pou n d code pack age mbrf20xxct-y (note 1) c0 suffix "g" ito-220ab note 1: "xx" defines voltage from 45v (mbrf2045ct-y) to 200v (mbrf20200ct-y) mbrf2060ct-y c0g c0 g rat i n gs an d ch aract eri st i cs cu rv es ex am ple preferred p/n pack i n g code green com pou n d code mbrf2060ct-y c0 c0 0 5 10 15 20 25 50 60 70 80 90 100 110 120 130 140 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductiveload with heatsink 0 25 50 75 100 125 150 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current per leg 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse c urrent (ma) percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics per leg tj=75 tj=125 tj=25 45ct-y 60ct-y - 20200ct-y 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward current (a) forward voltage (v) fig. 3 typical forward characteristics per leg pulse width=300 s 1% duty cycle 150ct-y - 200ct-y 100ct-y 60ct-y 45ct-y downloaded from: http:///
min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.80 - 0.071 o 2.41 2.67 0.095 0.105 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1404005 version: a14 m ark i n g di agram mbrf2045ct-y thru mbrf20200ct-y taiwan semiconductor pack age ou t li n e di m en si on s dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance per leg f=1.0mhz vsig=50mvp-p 45ct-y 60ct-y - 200ct-y 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration(s) fig. 6 typical transient thermal impedance per leg downloaded from: http:///
ret y rt assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1404005 version: a14 mbrf2045ct-y thru mbrf20200ct-y taiwan semiconductor n ot ic e specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, downloaded from: http:///
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